Inorganic perovskite materials have been extensively studied in many fields such as solar cells, light-emitting diodes, photodetectors, and lasers. At present, the preparation methods of inorganic perovskite single crystals mainly include vapor growth method and solution growth method. Vapor-phase growth technology is easy to achieve the preparation of high-quality single crystals, but due to the random nucleation and lattice mismatch during vapor phase epitaxy, the control of perovskite crystallization sites, crystal morphology and crystal size in the vapor phase system has become A difficult problem, which is also a great challenge to control and prepare high-performance perovskite integrated optoelectronic devices.

Recently, with the strong support of the National Natural Science Foundation of China, the Ministry of Science and Technology and the Chinese Academy of Sciences, Song Yanlin's research group of the Key Laboratory of Green Printing of the Institute of Chemistry, Chinese Academy of Sciences and Zhao Yongsheng's research group of the Key Laboratory of Photochemistry collaborated on the perovskite in the vapor growth system. Random nucleation and lattice mismatch problem, innovatively introduced the printed seed template into the perovskite vapor growth system, and proposed a method to control the epitaxial growth of inorganic perovskite single crystal using the seed template (Pictured). The researchers first prepared perovskite seeds on the hydrophobic substrate by inkjet printing, and then introduced the template with the grown seeds into the perovskite vapor growth system. The study found that the introduction of seed template can effectively suppress the random nucleation and lattice mismatch of perovskite crystals in the gas phase epitaxy process, thereby achieving the controllable gas phase pattern of perovskite single crystals with regular crystal morphology Change. By adjusting the vapor growth time, the size of the perovskite single crystal can be effectively controlled. The inorganic perovskite single crystal prepared by the method has high crystal quality, and can be directly used for preparing high-performance silicon-based lasers and photodetectors. This study provides a new way for the controlled gas phase preparation of high-quality inorganic perovskite single crystals, and is of great significance for the preparation of high-performance perovskite integrated optoelectronic devices.

The research results were published in the "Advanced Materials" (Adv. Mater. 2020, doi: 10.1002 / adma.201908006) published recently. Corresponding authors are Song Yanlin and Zhao Yongsheng, and the first authors are Gu Zhenkun and Zhou Zhonghao.


Gas-phase patterned preparation of inorganic perovskite single crystal

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